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mil-prf-19500/455c 25 january 1998 superseding mil-s-19500/455b 19 january 1988 performance specification sheet semiconductor device, transistor, npn, silicon, power switching types 2n5664, 2n5665, 2n5666, 2n5666s, 2n5667, and 2n5667s jan, jantx, jantxv, and jans this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for npn, silicon, power transistors for use in high-speed power- switching applications. four levels of product assurance are provided for each encapsulated device type as specified in mil-prf-19500. 1.2 physical dimensions. see figure 1 (to-66) and figure 2 (to-5). 1.3 maximum ratings. type p t t a = +25 q c p t t a = +100 q c v cbo v ceo v ebo i c i b t stg and t op 2n5664 2n5665 2n5666, s 2n5667, s w 2.5 1/ 2.5 1/ 1.2 2 1.2 2/ w 30 3/ 30 3/ 15 4/ 15 4/ v dc 250 400 250 400 v dc 200 300 200 300 v dc 6 6 6 6 a dc 5 5 5 5 a dc 1 1 1 1 q c -65 to +200 -65 to +200 -65 to +200 -65 to +200 1/ derate linearly 14.3 mw/ q c for t a > + 25 q c. 2/ derate linearly 6.9 mw/ q c for t a > + 25 q c. 3/ derate linearly 300 mw/ q c for t c > + 100 q c . 4/ derate linearly 150 mw/ q c for t c > +100 q c . amsc n/a fsc 5961 distribution statement. approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 25 april 1998 inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad street, columbus, oh 43216-5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/455c 2 1.4 primary electrical characteristics at t = 25 q c. a h fe |h fe | v be(sat) v ce(sat) pulse response limits v ce = 5 v i c = 1 a v ce = 5 v i c = 0.5 a dc f = 10 mhz i c = 3 a dc 1/ i c = 3 a dc 1/ t on i c = 1 a dc t off i c = 1 a dc 2n5665 2n5667, s 2n5664 2n5666, s 2n5664 2n5666, s 2n5665 2n5667, s min max 25 75 40 120 2.0 7.0 v dc 1.2 v dc 0.4 p s 0.25 p s 1.5 p s 2.0 1/ i b = 0.3 a dc for 2n5664, 2n5666, 2n5666s; i b = 0.6 a dc for 2n5665, 2n5667, 2n5667s. type r t jc 2n5664, 2n5665 2n5666, 2n5667 2n5666s, 2n5667s q c/w (max) 3.3 6.7 6.7 2. applicable documents 2.1 general. the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents. 2.2.1 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std -750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.3 order of precedence. in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil-prf-19500/455c 3 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. body contour is optional within zone defined by ld and cd. 4. these dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. when gauge is not used, measurement will be made at seating plane. 5. both terminals. 6. at both ends. 7. two holes. 8. the collector shall be electrically connected to the case. 9. ld applies between l 1 and ll. diameter is uncontrolled in l 1 . figure 1. physical dimensions of transistor types 2n5664 and 2n5665. dimensions ltr inches millimeters notes min max min max cd - - - .620 - - - 15.75 3 cd 1 .470 .500 11.94 12.70 ch .250 .340 6.35 8.64 3 hr - - - .350 - - - 8.89 6 hr 1 .115 .145 2.92 3.68 ht .050 .075 1.27 1.91 3 ht 1 - - - .050 - - - 1.27 3 ld .028 .034 .711 .863 5, 9 ll .360 .500 9.14 12.70 5, 9 l 1 - - - .050 - - - 1.27 4 mhd .142 .152 3.62 3.86 7 mhs .958 .962 24.33 24.43 ps .190 .210 4.83 5.33 4 ps 1 .093 .107 2.36 2.72 4 s 1 .570 .590 14.48 14.99
mil-prf-19500/455c 4 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. measured in the zone beyond .250 inches (6.35 mm) from the seating plane. 4. measured in the zone .050 inches (1.27 mm) and .250 inches (6.35 mm) from the seating plane. 5. variations on dimension cd in this zone shall not exceed .010 inches (0.25 mm). 6. outline in this zone is not controlled. 7. when measured in a gauging plane .054 inches +.001, -.000 (1.37 mm +.03, -.00 ) below the seating plane of the transistor, maximum diameter leads shall be within .007 inches (.18 mm) of their true location relative to a maximum width tab. smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. figure 3 shows the preferred measured method. 8. the collector shall be electrically connected to the case. 9. measured from the maximum diameter of the actual device. 10. all three leads 11. diameter of leads in this zone is not controlled. 12. lead 1 - emitter; lead 2 - base, lead 3 - collector. 13. for transistor types 2n5666 and 2n5667, ll is 1.500 inches (38.1 mm) minimum and 1.75 inches (44.45 mm) maximum. 14. for transistor types 2n5666s and 2n5667s, ll is .500 inches (12.7 mm) minimum and .75 inches (19.05 mm) maximum. figure 2. physical dimensions of transistor types 2n5666, 2n5666s, 2n5667 and 2n5667s. dimensions ltr inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .1414 nom 3.59 nom 6 ld .016 .021 0.41 0.53 3 ll see notes 13 and 14 l 1 - - - .050 - - - 1.27 10 lu .016 .019 0.41 0.48 4 p .100 - - - 2.54 - - - 5 q6 r - - - .007 - - - 0.18 tl .029 .045 0.74 1.14 tw 0.28 .034 0.71 0.86
mil-prf-19500/455c 5 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the following gauging procedures shall be used: the use of a pin straightener prior to insertion in the gauge is permissible. the device being measured shall be inserted until its seating plane is .125 inch (3.18 mm) +.010 inch (0.254 mm) from the seating surface of the gauge. a spacer may be used to obtain the .125 inch (3.18 mm) distance from the gauge seat prior to force application. a force of 8 " .5 ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. when examined visually after the force application (the force need not be removed) the seating plane of the device shall be seated against the gauge. 4. the location of the tab locator, within the limits of dimension c, will be determined by the tab and flange dimension of the device being checked. figure 3. gauge for lead and tab location for device types 2n5666, 2n5666s, 2n5667 and 2n5667s. dimensions ltr inches millimeters min max min max a .1409 .1419 3.579 3.604 b .0702 .0712 1.783 1.809 c .182 .199 4.62 5.05 d .009 .011 0.23 0.28 e .125 nom 3.18 nom f .054 .055 1.37 1.40 g .372 .378 9.45 9.60 h .0350 .0355 0.889 0.902 j .150 nom 3.81 nom k .0325 .0335 0.826 0.851 l .0595 .0605 1.511 1.537
mil-prf-19500/455c 6 3. requirements 3.1 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 associated specification. the individual item performance requirements shall be in accordance with mil-prf-19500, and as specified herein. 3.3 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil-prf -19500 and herein. 3.4 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500 and on figures 1 and 2 herein. 3.4.1 lead finish. lead finish shall be solderable in accordance with mil -prf-19500. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 marking. marking shall be in accordance with mil -prf-19500. 3.6 electrical performance characteristics. unless otherwise specified herein, the electrical performance characterics are as specified in 1.3, 1.4 and table i herein. 3.7 electrical test requirements. the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection. qualification inspection shall be in accordance with mil -prf-19500.
mil-prf-19500/455c 7 4.3 screening (jans, jantx, and jantxv levels only). screening shall be in accordance with mil -prf -19500 (appendix e, table iv), and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see appendix e, measurement table iv of mil-prf-19500 jans level jantx and jantxv levels 9 i ces1 and h fe2 i ces1 11 ' i ces1 and h fe2; ' i ces1 = 100 percent of initial value or 10 na dc, whichever is greater; ' h fe2 = r 15 percent i ces1 and h fe2; ' i ces1 = 100 percent of initial value or 20 na dc, whichever is greater. 12 see 4.3.1 see 4.3.1 13 subgroup 2 of table i herein; ' i ces1 = +100 percent of initial value or 10 na dc, whichever is greater. ' h fe2 = + 15 percent subgroup 2 of table i herein; ' i ces1 = +100 percent of initial value or 20 na dc, whichever is greater. ' h fe2 = + 25 percent 4.3.1 power burn-in conditions. power burn-in conditions are as follows: t j = + 187.5 r 12.5 q c, v ce = 100 v dc, t a d + 100 q c. 4.4 conformance inspection. conformance inspection shall be in accordance with mil-prf-19500. 4.4.1 group a inspection. group a inspection shall be conducted in accordance with appendix e, table v of mil-prf-19500 and table i herein. endpoint electrical measurements shall be in accordance with the applicable steps of table ii herein 4.4.2 group b inspection. group b inspection shall be conducted in accordance with conditions specified for the subgroup testing in appendix e, table via (jans) and table vib (jan, jantx, and jantxv) of mil-prf-19500, and as follows. electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table ii herein. 4.4.2.1 group b inspection, appendix e, table via (jans) of mil-prf-19500. subgroup method condition b4 1037 v cb = 30 v dc minimum, p t = 1.2 w (to-5),. p t = 2.5 w (to-66) minimum, t a = +25 q c r 3 q c; t on = t off = 3 minutes minimum for 2,000 cycles. no heat sink or forced-air cooling on devices shall be permitted. b5 1027 see 4.5.4. b6 3131 see 4.5.2.
mil-prf-19500/455c 8 4.4.2.2 group b inspection, appendix e, table vib (jantx and jantxv) of mil-prf-19500. subgroup method condition b3 1027 t j = +187.5 q c r 12.5 q c, v ce = 100 r 5 v dc; t a = d +100 q c. b5 3131 see 4.5.2. 4.4.3 group c inspection. group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix e, table vii of mil-prf-19500 and as follows. electrical measurements (endpoints) and delta requirements shall be in accordance with the applicable steps of table ii herein. subgroup method condition c2 2036 terminal strength (tension) 2n5664 and 2n5665 only: test condition a, weight = 3 pounds, application time = 15 seconds. terminal strength (lead fatigue) 2n5666, 2n5666s, 2n5667 and 2n5667s: test condition e. c6 1027 2n5664, 2n5666 and 2n5666s, t c = +100 q c; p t = 30 w; v ce = 30 v dc. 2n5665, 2n5667 and 2n5667s, t a = +25 q c; p t = 1.2 w; v ce = 40 v. 4.5 methods of examination and test. methods of examination and test shall be as specified in the appropriate tables and as follows: 4.5.1 pulse measurements. conditions for pulse measurements shall be as specified in section 4 of mil-std-750. 4.5.2 thermal resistance. thermal resistance measurements shall be conducted in accordance with method 3131 of mil-std-750. the following details shall apply: a. collector current magnitude during power application: 2n5664 and 2n5665, 0.833 a dc. 2n5666, 2n5666s, 2n5667 and 2n5667s, 0.41 a dc. b. collector to emitter voltage magnitude shall be 20 v dc. c. reference temperature measuring point shall be the case. d. reference temperature measuring point shall be 25 q c d t r d 75 q c and recorded before the test is started. e. mounting arrangement shall be with heat sink to header. f. maximum limit of r t jc : 2n5664 and 2n5665 shall be 3.3 q c/w; 2n5666, 2n5666s, 2n5667 and 2n5667s shall be 6.7 q c/w. 4.5.3 inspection conditions. unless otherwise specified herein, all inspections shall be conducted at a case temperature (t c ) of 25 q c.
mil-prf-19500/455c 9 4.5.4 group b accelerated life test. this test shall be conducted using one of the three options listed herein (a, b, or c) with the following conditions applying to all options: v cb = 30 v dc, 96 hours minimum, t j = +275 q c. a. t a = +150 q c, maximum. b. p t = 2.5 w (to-66); p t = 1.2 w (to-5), t a = +112 q c or p t adjusted to give a lot average of t j = +275 q c. c. t a = +25 q c +3 q c with p t adjusted to give a lot average of t j = +275 q c.
mil-prf-19500/455c 10 table i. group a inspection. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 1 visual and mechanical inspection subgroup 2 breakdown voltage collector to emitter 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s breakdown voltage emitter to base collector to emitter cutoff current 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s collector to base cutoff current 2n5664, 2n5666, sn5666s 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s 2n5665, 2n5667, 2n5667s forward-current transfer ratio 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s forward-current transfer ratio 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s forward-current transfer ratio 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s 2071 3011 3026 3041 3036 3076 3076 3076 bias condition b; i c = 10 ma dc pulsed (see 4.5.1), r 1 = 100 : bias condition d, i e = 10 p a dc; pulsed (see 4.5.1) bias condition c v ce = 200 v dc v ce = 300 v dc bias condition d v cb = 200 v dc v cb = 250 v dc v cb = 300 v dc v cb = 400 v dc v ce = 2 v dc, i c = 0.5 a dc pulsed (see 4.5.1) v ce = 5 v dc, i c = 1.0 a dc pulsed (see 4.5.1) v ce = 5 v dc, i c = 3.0 a dc v (br)cer v (br)ebo i ces1 i cbo h fe1 h fe2 h fe3 250 400 6 40 25 40 25 15 10 0.2 0.1 1.0 0.1 1.0 120 75 v dc v dc p a dc p a dc p a dc ma dc p a dc ma dc see footnote at end of table.
mil-prf-19500/455c 11 table i. group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 2 - continued forward-current transfer ratio collector-emitter saturation voltage 2n5664, 2n5666, 2n2666s 2n5665, 2n2667, 2n5667s collector-emitter saturation voltage base-emitter saturation voltage 2n5664, 2n5666, 2n2666s 2n5665, 2n2667, 2n5667s base-emitter saturation voltage subgroup 3 high-temperature operation: collector to emitter cutoff current 2n5664, 2n5666, 2n2666s 2n5665, 2n2667, 2n5667s low-temperature operation forward-current transfer ratio 2n5664, 2n5666, 2n2666s 2n5665, 2n2667, 2n5667s 3076 3071 3071 3066 3066 3041 3076 v ce = 5 v dc, i c = 5 a dc pulsed (see 4.5.1) i c = 3.0 a dc, i b = 0.3 a dc, pulsed (see 4.5.1) i b = 0.6 a dc, pulsed (see 4.5.1) i c = 5 a dc, i b = 1 a dc pulsed (see 4.5.1) test condition a, i c = 3.0 a dc, i b = 0.3 a dc, pulsed (see 4.5.1) i b = 0.6 a dc, pulsed (see 4.5.1) test condition a, i c = 5 a dc, i b = 1 a dc, pulsed (see 4.5.1) t a = + 150 q c bias condition c v ce = 200 v dc v ce = 300 v dc t a = -55 q c v ce = 5 v dc, i c = 1.0 a dc pulsed (see 4.5.1) h fe4 v ce(sat)1 v ce(sat)2 2/ v be(sat)1 2/ v be(sat)2 i ces2 h fe5 5 15 10 0.4 1.0 1.2 1.5 100 v dc v dc v dc v dc p a dc see footnote at end of table.
mil-prf-19500/455c 12 table i. group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 4 magnitude of common-emitter, small-signal short-circuit, forward-current, transfer ratio open-circuit output capacitance switching time turn-on time 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s turn-off time 2n5664, 2n5666, 2n5666s 2n5665, 2n5667, 2n5667s subgroup 5 safe operating area (continuous dc) (for types 2n5664 and 2n5665 only) test #1 2n5664 and 2n5665 test #2 2n5664 and 2n5665 test #3 2n5664 test #4 2n5665 3306 3236 3051 v ce = 5 v dc, i c = 0.5 a dc f = 10 mhz v cb = 10 v dc, 100 d f d 1 mhz test condition a; i c = 1.0 a dc, v cc = 100 v dc see figure 4 see figure 5 test condition a; i c = 1.0 a dc, v cc = 100 v dc see figure 4 see figure 5 t c = + 100 q c, t t 1 s, 1 cycle; t r + t f = 10 p s (se figure 6) v ce = 6 v dc, i c = 5 a dc v ce = 40 v dc, i c = 0.75 a dc v ce = 200 v dc, i c = 43 ma dc v ce = 300 v dc, i c = 21 ma dc | h fe | c obo t on t off 2.0 7.0 120 0.25 1.5 2.0 pf p s p s see footnote at end of table.
mil-prf-19500/455c 13 table i. group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 5 - continued safe operating area (continuous dc) (for types 2n5666, 2n5666s, 2n5667, and 2n5667s test #1 2n5666, 2n5666s, 2n5667, and 2n5667s test #2 2n5666, 2n5666s, 2n5667, and 2n5667s test #3 2n5666 and 2n5666s test #4 2n5667 and 2n5667s safe operating area (switching) 2n5664 2n5666 and 2n5666s 2n5665 2n5667 and 2n5667s end-point electrical measurements subgroups 6 and 7 not applicable 3051 3053 t c = + 100 q c, t t 1 s, 1 cycle; t r + t f = 10 p s (se figure 7) v ce = 3.0 v dc, i c = 5 a dc v ce = 37.5 v dc, i c = 0.4 a dc v ce = 200 v dc, i c = 27 ma dc v ce = 300 v dc, i c = 14 ma dc load condition b (clamped inductive load) (see figure 8); t c = + 100 q c, t r + t f d 10 p s, duty cycle d 2 percent; t p = 4 ms; r s = 0.5 : , r bb1 = 50 : , v bb1 = 50 v dc r bb2 = 50 : , v bb2 = -4 v dc i c = 5 a dc, v cc = 50 v dc r l d 2.5 : , l = 40 mh (triad c-48u or equivalent) clamp voltage = 200 +0, -5 v dc clamp voltage = 300 +0, -5 v dc see table ii, steps 1 and 4 1/ for sampling plan, see mil-prf-19500
mil-prf-19500/455c 14 table ii. groups b and c electrical measurements. 3 / 4 / 5 / steps inspection 1/ mil-std-750 symbol limits unit method conditions min max 1. collector to emitter cutoff current 2n5664 2n5666, 2n5666s 2n5665 2n5667, 2n5667s 3041 bias condition c v ce = 200 v dc v ce = 300 v dc i ces1 0.2 0.2 p a dc p a dc 2. collector to emitter voltage (saturated) 3071 i c = 5 a dc; i b = 1 a dc (pulsed, see 4.5.1) 2/ v ce(sat)2 1.0 v dc 3. base to emitter saturation voltage 3066 test condition a, i c = 5 a dc i b = 1 a dc, pulsed (see 4.5.1) 2/ v be(sat)2 1.5 v dc 4. forward-current transfer ratio 2n5664 2n5666, 2n5666s 2n5665 2n5667, 2n5667s 3076 v ce = 5 v dc, i c = 1.0 a dc pulsed (see 4.5.1) h fe2 40 25 120 75 5. collector to emitter cutoff current 3041 base condition c ' i ces1 100 percent of initial value or 20 na dc, whichever is greater. 2n5664 2n5666, 2n5666s 2n5665 2n5667, 2n5667s v ce = 200 v dc v ce = 300 v dc 6. forward-current transfer ratio 3076 v ce = 5 v dc, i c = 1.0 a dc pulsed (see 4.5.1) ' h fe2 2/ r 25 percent change from initial reading. 1/ see mil-prf-19500 for sampling plan. 2/ measured at less than 0.125 in (3.175 mm) from case. 3/ the electrical measurements for appendix e, table via (jans) of mil-prf-19500 are as follows: a. subgroup 3, see table ii herein, steps 1, 2, 3, and 4. b. subgroup 4, see table ii herein, steps 1, 2, 3, and 4. c. subgroup 5, see table ii herein, steps 1, 2, 3, and 4.
mil-prf-19500/455c 15 table ii. groups b and c electrical measurements - continued. 4/ the electrical measurements for appendix e, table vib (jantx and jantxv) of mil-prf-19500 are as follows: a. subgroup 2, see table ii herein, steps 1 and 3. b. subgroup 3, see table ii herein, steps 1, 2, 3, 4, 5, and 6. c. subgroup 6, see table ii herein, steps 1, 4, 5, and 6. 5/ the electrical measurements for appendix e, table vii of mil-prf-19500 are as follows: a. subgroup 2, see table ii herein, steps 1, 2, and 4. b. subgroup 3, see table ii herein, steps 1, 2, and 4. c. subgroup 6, see table ii herein, steps 1, 2, 3, 4, 5, and 6.
mil-prf-19500/455c 16 notes: 1. the input waveform is supplied by a pulse generator with the following characteristics: t r d 15 ns, t f d 15 ns, z out = 50 ohm, pw = 10 p s, duty cycle d 2 percent. 2. output waveforms are monitored on an oscilloscope with the following characteristics: t r d 15 ns, z in t 10 m : , c in d 11.5 pf. 3. resistors shall be noninductive types. 4. the dc power supplies may require additional bypassing in order to minimize ringing. 5. the input pulse voltages and supply voltages (-4 v dc and + 100 v dc) are nominal and shall be adjusted to obtain i b1 = - i b2 = 30 ma and i c = 1 a. 6. an equivalent circuit may be used. 7. 0.02 p f capacitor may be removed during voltage adjustments. figure 4. pulse response test circuit for types 2n5664, 2n5666 and 2n5666s.
mil-prf-19500/455c 17 notes: 1. the input waveform is supplied by a pulse generator with the following characteristics: t r d 15 ns, t f d 15 ns, z out = 50 ohm, pw = 10 p s, duty cycle d 2 percent. 2. output waveforms are monitored on an oscilloscope with the following characteristics: t r d 15 ns, z in t 10 m : , c in d 11.5 pf. 3. resistors shall be noninductive types. 4. the dc power supplies may require additional bypassing in order to minimize ringing. 5. the input pulse voltages and supply voltages (-4 v dc and + 100 v dc) are nominal and shall be adjusted to obtain i b1 = - i b2 = 50 ma and i c = 1 a. 6. an equivalent circuit may be used. 7. 0.02 p f capacitor may be removed during voltage adjustments. figure 5. pulse response test circuit for types 2n5665, 2n5667 and 2n5667s.
mil-prf-19500/455c 18 figure 6. maximum safe operating graph (continuous dc) for types 2n5664 and 2n5665.
mil-prf-19500/455c 19 figure 7. maximum safe operating graph (continuous dc) for types 2n5666, 2n5666s, 2n5667, and 2n5667s.
mil-prf-19500/455c 20 figure 8. safe operating area for switching between saturation and cutoff (clamped inductive load).
mil-prf-19500/455c 21 figure 9. safe operating area for switching between saturation and cutoff (unclamped inductive load).
mil-prf-19500/455c 22 5. packaging 5.1 packaging. packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 5.2 marking. unless otherwise specified (see 6.2), marking shall be in accordance with mil-std-129. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil -prf -19500 are applicable to this specification. 6.2 acquisition requirements. see mil- prf-19500. 6.3 qualification. with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified products list qpl no.19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center columbus, attn: dscc-vqe, 3990 east broad street, columbus, oh 43216-5000. 6.4 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. custodians: preparing activity: army - cr dla - cc navy - ec air force - 17 (project 5961-1917) review activities: army - ar, mi navy - as, cg, mc air force - 13, 19, 85, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/455c 2. document date (yymmdd) 980125 3. document title semiconductor device, transistor, npn, silicon, power switching types 2n5664, 2n5665, 2n5666, 2n5666s, 2n5667 and 2n5667s jan, jantx, jantxv and jans 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted (yymmdd) 8. preparing activity a. point of contact:alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil c. address: defense supply center columbus, attn: dscc-vat, 3990 east broad street, columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756-2340 autovon 289-2340 dd form 1426, oct 89 previous editions are obsolete 198/290

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